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Deposition of conductive TiN shells on SiO2 nanoparticles with a fluidized bed ALD reactor

机译:用流化床ALD反应器在SiO2纳米颗粒上沉积导电TiN壳

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摘要

Conductive TiN shells have been deposited on SiO2 nanoparticles (10–20 nm primary particle size) with fluidized bed atomic layer deposition using TDMAT and NH3 as precursors. Analysis of the powders confirms that shell growth saturates at approximately 0.4 nm/cycle at TDMAT doses of >1.2 mmol/g of powder. TEM and XPS analysis showed that all particles were coated with homogeneous shells containing titanium. Due to the large specific surface area of the nanoparticles, the TiN shells rapidly oxidize upon exposure to air. Electrical measurements show that the partially oxidized shells are conducting, with apparent resistivity of approximately ~11 k? cm. The resistivity of the powders is strongly influenced by the NH3 dose, with a smaller dose giving an order-of-magnitude higher resistivity.
机译:导电TiN壳层已经以TDMAT和NH3为前体通过流化床原子层沉积法沉积在SiO2纳米颗粒(初始粒径10–20 nm)上。对粉末的分析证实,在> 1.2 mmol / g粉末的TDMAT剂量下,壳的生长以大约0.4 nm /周期达到饱和。 TEM和XPS分析表明,所有颗粒均被含钛的均质壳包覆。由于纳米颗粒的大比表面积,TiN壳暴露于空气中会迅速氧化。电学测量表明,部分氧化的壳处于导电状态,视电阻率约为〜11kΩ。厘米。粉末的电阻率受NH3剂量的强烈影响,剂量越小,电阻率的数量级越高。

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